ROHM's New High-Speed Switching SiC MOSFET 4-Pin Package [SCT3xxxxR Series]

Learn more about ROHM's 3rd generation trench gate Silicon Carbide (SiC) MOSFETs featuring a new 4-pin design. The novel TO-247-4L package incorporates an additional driver source terminal for the gate driver separate from the standard source pin that minimizes the effects of the inductance component, resulting in even lower switching loss.

For more information about the 4-Pin package SiC MOSFETs please visit: https://bit.ly/2mUs0um


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